Heynova's PAG products have ultra-high purity and excellent photosensitizing properties. Through self-developed molecular design technology, the company has realized precise control of acid diffusion while ensuring extremely low metal impurity content, especially suitable for advanced processes below 28nm. The company's products have wide compatibility and flexible customization, and can work with a variety of resin systems, compatible with mainstream photoresist systems, effectively improving the resolution and pattern fidelity of photoresist.
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![Sulfonium, (4-methylphenyl)diphenyl-, salt with 2-[(2,2-difluoro-2-sulfoacetyl)oxy]ethyl tricyclo[3.3.1.13,7]decane-1-carboxylate (1:1) 1135815-31-4 C34H36F2O7S2](/uploads/image/20250710/1135815-31-4.webp "Sulfonium, (4-methylphenyl)diphenyl-, salt with 2-[(2,2-difluoro-2-sulfoacetyl)oxy]ethyl tricyclo[3.3.1.13,7]decane-1-carboxylate (1:1) 1135815-31-4 C34H36F2O7S2")
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A photoacid generator (PAG) is a photosensitive compound that generates acid after exposure to light. PAGs are key components in chemically amplified photoresist systems, where the generated acid initiates chemical reactions during post-exposure processing.
In a photoresist formulation, the PAG works together with other components such as resin, solvent and additives. The selection of a suitable PAG depends on factors including chemical structure, acid generation behavior, compatibility with the resist system, purity requirements and process conditions.
The Heynova PAG portfolio includes ionic sulfonium and iodonium salts, together with nonionic diazo sulfone, imide sulfonate and oxime sulfonate products. The table below presents representative products and currently published specifications for each chemistry family.
| PAG Type | Chemistry Family | Representative Heynova Products | HPLC Purity | Published Metal-Ion Levels |
| Ionic PAG | Sulfonium Salt PAGs | Triphenylsulfonium 10-Camphorsulfonate, CAS 227199-92-0 1-(4-Butoxy-1-Naphthalenyl)tetrahydro-Thiophenium Perfluorobutanesulfonate, CAS 209482-18-8 | ≥99% | ≤50–100 ppb each, depending on grade |
| Ionic PAG | Iodonium Salt PAGs | Bis(4-Tert-Butylphenyl)iodonium Trifluoromethanesulfonate, CAS 84563-54-2 Bis(4-Tert-Butylphenyl)iodonium Perfluoro-1-Butanesulfonate, CAS 194999-85-4 | ≥99% | ≤100 ppb each for listed grades |
| Nonionic PAG | Diazo Sulfone PAGs | Bis(Cyclohexylsulfonyl)diazomethane, CAS 138529-81-4 Bis(T-Butylsulfonyl)diazomethane, CAS 138529-84-7 | ≥99% | ≤50–100 ppb each, depending on grade |
| Nonionic PAG | Imide Sulfonate PAGs | 5-Norbornene-2,3-Dicarboximidyl Trifluoromethanesulfonate, CAS 133710-62-0 N-Hydroxy-5-Norbornene-2,3-Dicarboximide Perfluoro-1-Butanesulfonate, CAS 307531-76-6 | ≥99% | ≤10 ppb each for selected grades |
| Nonionic PAG | Oxime Sulfonate PAGs | Ethanone Derivative Bis[o-(Propylsulfonyl)oxime], CAS 300374-81-6 | ≥99% | ≤100 ppb each |
Heynova's photoacid generator (PAG) in the semiconductor applications show a variety of advantages:
High quality: The product has extremely high purity and low impurity content, which effectively avoids the introduction of impurities in the photolithography process and ensures the high precision and reliability of semiconductor manufacturing.
High yield: High quantum yield of photoacid generator, a small amount of light can generate a sufficient amount of acid, significantly improve the efficiency of lithography, shorten the exposure time.
Good compatibility: Good compatibility with all kinds of photoresist resin, it can effectively avoid phase separation and other quality problems, to ensure the accuracy of photolithography pattern.
Good thermal stability: Can meet the high temperature requirements of complex lithography processes.
Customizable design: The molecular structure of PAG can be adjusted according to the production process, which is suitable for special processes.
As a key photosensitive material for photoresists, PAG plays a central role in semiconductor manufacturing. In KrF photoresist, after exposure at 248nm wavelength, sulfonic acid is generated to induce structural changes in the resin and precisely regulate pattern transfer with a resolution of 120nm, which is suitable for chip manufacturing in mature processes. ArF photoresist is used with 193nm light source, and PAG meets the requirements of high-resolution and low roughness for advanced processes up to and including 7nm, and the accuracy of line width is controlled at ±3nm with the help of high acid productivity and strong acidity. Meanwhile, in the lithography of TFT arrays for display panels, the PAG helps the photoresist to form fine circuits and improve the display performance of the panels.
What types of photoacid generators does Heynova offer?
Heynova’s portfolio includes ionic sulfonium and iodonium PAGs, as well as nonionic diazo sulfone, imide sulfonate and oxime sulfonate products. Different molecular structures and counterions are available for screening in different photoresist formulations.
Which specifications should be considered when comparing PAG products?
HPLC purity is an important starting point, but buyers should also review individual metal-ion limits, molecular structure, generated acid, moisture, residual solvents and other relevant impurities where data are available. Heynova currently lists selected grades with metal-ion limits of ≤10, ≤50 or ≤100 ppb each.
Can the same PAG be used in KrF, ArF and EUV photoresists?
Not automatically. For a PAG photoresist formulation, performance depends on the exposure platform, resin chemistry, solvent system, PAG loading, quencher concentration and bake conditions. Each candidate should be tested in the intended formulation and process rather than selected by exposure wavelength alone.
What information should I provide when requesting a quotation or product recommendation?
Provide the product name or CAS number, required quantity, destination country, target specification, documentation requirements and expected delivery date. For a product recommendation, also include the exposure platform, resin type, solvent system, required metal-ion limit and sample quantity.
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